Silicon Controlled Rectifier Principle Operation
Silicon Controlled Rectifier Principle Operation: Silicon Controlled Rectifier Principle Operation (SCR) consists of four layers of semiconductor material, alternately p-type and n-type as illustrated in Fig. 19-1(a). Because of its construction, the SCR is sometimes referred to as a four-layer diode, or a pnpn device. The layers are designated p1,n1,p2, and n2, as shown. There […]
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