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Electronic Communication Systems / Semiconductor Microwave Devices

Types of Optoelectronic Devices

Types of Optoelectronic Devices: Although light-emitting diodes and photodiodes are not quantum-mechanical devices in the Types of Optoelectronic Devices, they are semiconductor devices closely associated with lasers. It is most convenient to cover them here.…

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December 5, 2018
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Electronic Communication Systems / Semiconductor Microwave Devices

Semiconductor Lasers

Semiconductor Lasers: Semiconductor Lasers was discovered in 1962 that a gallium arsenide diode, such as the one shown in Figure 12-41, is capable of producing laser action. This occurs when the diode is forward-biased, so…

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December 5, 2018
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Electronic Communication Systems / Semiconductor Microwave Devices

Continuous Wave Gas Laser

Continuous Wave Gas Laser: The first Continuous Wave Gas Laser, in 1961, was a gas laser using a mixture of helium and neon gases. These are still used, and a simplified He-Ne laser is shown…

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December 5, 2018
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Electronic Communication Systems / Semiconductor Microwave Devices

Pulsed Ruby Laser

Pulsed Ruby Laser: The Pulsed Ruby Laser is similar to the ruby cavity maser, to some extent, in that stimulation is applied to raise the chromium atoms to a higher energy level to secure a…

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December 5, 2018
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Electronic Communication Systems / Semiconductor Microwave Devices

Cryogenically Cooled Amplifiers

Cryogenically Cooled Amplifiers: The term solid-state is used deliberately here; it does not mean "semiconductor." In terms of the somewhat older maser parlance, it means the opposite of gaseous, i.e., ruby. The cross section of…

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December 5, 2018
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Electronic Communication Systems / Semiconductor Microwave Devices

Ruby Maser

Ruby Maser: As was know ferrites of certain materials have atomic systems that can be made to resonate magnetically at frequencies dependent on the atomic structure of the material and the strength of the applied…

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December 5, 2018
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Electronic Communication Systems / Semiconductor Microwave Devices

Schottky Barrier Diode

Schottky Barrier Diode: Schottky junctions have been shown and described throughout this chapter, in conjunction with various devices that use them in their construction in Figure 12-4. Accordingly it will be realized that the Schottky…

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December 5, 2018
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Electronic Communication Systems / Semiconductor Microwave Devices

Pin Diode Construction

Pin Diode Construction: The Pin Diode Construction consists of a narrow layer of p-type semiconductor separated from an equally narrow layer of n-type material by a somewhat thicker region of intrinsic material. The intrinsic layer…

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December 4, 2018
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Electronic Communication Systems / Semiconductor Microwave Devices

Impatt Diode Working

Impatt Diode Working: IMPATT Diode Working is a combination of delay involved in generating avalanche current multiplication, together with delay due to transit time through a drift space, provides the necessary 180° phase difference between…

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December 4, 2018
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Electronic Communication Systems / Semiconductor Microwave Devices

Gunn Diode Working Principle

Gunn Diode Working Principle: A practical Gunn Diode Working Principle consists of a slice like the one shown in Figure 12-24, sometimes with a buffer layer between the active layer and the substrate, mounted in…

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December 4, 2018
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