Category: FET BIASING

MOSFET Biasing Circuits

MOSFET Biasing Circuits: DE-MOSFET Bias Circuits – DE-MOSFET bias circuits are similar to JFET bias circuits. Any of the FET bias circuits already discussed can be used to produce a negative VGS level for an n-channel MOSFET Biasing Circuits, or a positive VGS for a p-channel device. In this case, both devices would be operating in […]

Universal Transfer Characteristics for FET

Universal Transfer Characteristics for FET: A Universal Transfer Characteristics for FET is simply a transfer characteristic plotted with IDSS = 1 and VP = 1. Then, instead of the scales being calibrated in milliamps and volts, they are marked as the ratios ID/IDSS and VGS/VP. To construct the Universal Transfer Characteristics for FET, Eq. 9-1 is rewritten, Now, by substituting […]

JFET Biasing Circuits

JFET Biasing Circuits: Use of Plus/Minus Supplies – When plus/minus supply voltages are to be used with a JFET Biasing Circuits, the gate terminal is usually grounded via RG, as illustrated in Fig. 10-40(a). In this case, the circuit is essentially a voltage divider bias circuit with the gate bias voltage equal to the level […]

JFET Bias Circuit Design

JFET Bias Circuit Design: Design Approach – Design of JFET Bias Circuit Design is just as simple as design of BJT bias circuits. One major difference is that FET circuit design normally uses a graphical approach involving the drawing of a bias line on the device transfer characteristics, as in the case of FET circuit […]

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