Category: SEMICONDUCTOR MICROWAVE DEVICES

Schottky Barrier Diode

Schottky Barrier Diode: Schottky junctions have been shown and described throughout this chapter, in conjunction with various devices that use them in their construction in Figure 12-4. Accordingly it will be realized that the Schottky Barrier Diode is an extension of the oldest semiconductor device of them all the point-contact diode. Here the metal-semiconductor interface […]

Pin Diode Construction

Pin Diode Construction: The Pin Diode Construction consists of a narrow layer of p-type semiconductor separated from an equally narrow layer of n-type material by a somewhat thicker region of intrinsic material. The intrinsic layer is a lightly doped n-type semiconductor. The name of the diode is derived from the construction (p-intrinsic-n). Although gallium arsenide […]

Impatt Diode Working

Impatt Diode Working: IMPATT Diode Working is a combination of delay involved in generating avalanche current multiplication, together with delay due to transit time through a drift space, provides the necessary 180° phase difference between applied voltage and the resulting current in an Impatt Diode Working. The cross section of the active region of this […]

Gunn Diodes

Gunn Diodes: A practical Gunn diodes consists of a slice like the one shown in Figure 12-24, sometimes with a buffer layer between the active layer and the substrate, mounted in any of a number of packages, depending on the manufacturer, the fre­quency and the power level. Encapsulation identical to that shown for varactor diodes […]

Gunn Effect

Gunn Effect: In 1963, Gunn discovered the transferred electron effect which now bears his name. This Gunn Effect is instrumental in the generation of microwave oscillations in bulk semicon­ductor materials. The effect was found by Gunn to be exhibited by gallium arsenide and indium phosphide, but cadmium telluride and indium arsenide have also subse­quently been […]