FET Transistor

Generalized FET Amplifier Circuit

Generalized FET Amplifier Circuit: The analysis of a common source amplifier with a source resistance RS, a common gate amplifier and a common drain amplifier at low frequencies may be made by considering the Generalized FET Amplifier Circuit given in Fig. 13.55. The Generalized FET Amplifier Circuit consists of three independent signal sources (Vin in

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Small Signal Model of FET

Small Signal Model of FET: The Small Signal Model of FET which consists of Low Frequency Small Signal Model for FET and High Frequency Model for FET. Low Frequency Model: In a FET, instantaneous drain current iD is a function of the instantaneous gate-source voltage vGS and instantaneous drain-source voltage vDS and is, therefore, expressed

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FET Biasing Methods – Fixed Bias, Self Bias, Potential Divider Bias and Current Source Bias

FET Biasing Methods – Fixed Bias, Self Bias, Potential Divider Bias and Current Source Bias: Unlike BJTs, thermal runaway does not occur with FETs. However, the wide differences in maximum and minimum transfer characteristics make ID levels unpredictable with simple fixed-gate bias voltage. To obtain reasonable limits on quiescent drain currents ID and drain-source voltage

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Parameters of JFET

Parameters of JFET: JFET has certain parameters which determine the performance. Such Parameters of JFET are (i) ac drain resistance, (ii) transconductance, (iii) amplification factor, and (iv) dc drain resistance, as explained below: 1. AC Drain Resistance: It is defined as the ratio of change in drain-source voltage to change in drain current at constant

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