Semiconductor Diodes

AC Equivalent Circuit of Semiconductor Diode

AC Equivalent Circuit of Semiconductor Diode: Junction Capacitances – The depletion region of a pn-junction is a layer depleted of charge carriers situated between two blocks of low resistance material. Because this is the description of a capacitor, the depletion region clearly has a capacitance. The depletion layer capacitance (Cpn) may be calculated from the equation …

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Temperature Effect on Semiconductor Diode

Temperature Effect on Semiconductor Diode: Diode Power Dissipation – The power dissipation in a diode is simply calculated as the device terminal voltage multiplied by the current level. Device manufacturers specify a maximum power dissipation for each type of diode. If the specified level is exceeded, the device will overheat and it may short-circuit or …

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Forward and Reverse Bias Characteristics of Diode

Forward and Reverse Bias Characteristics of Diode: Figures 2-4 and 2-5 show typical Forward and Reverse Bias Characteristics of Diode for low-current silicon and germanium diodes. From the silicon diode characteristics in Fig. 2-4, it is seen that the forward current (IF) remains very low (less than microamps) until the diode forward-bias voltage (VF) exceeds …

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PN Junction Diode Working Principle

PN Junction Diode Working Principle: A PN Junction Diode Working Principle explains about the ability to permit substantial current flow when forward-biased, and to block current when reverse-biased. Thus, it can be used as a switch; on when forward-biased, and off when biased in reverse. In PN Junction Diode Working Principle, the copper wire connecting …

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