Complementary Metal Oxide Semiconductor (CMOS): With active load switching, the current drain with a low output is approximately equal to ID(sat). This may cause a problem with battery operated equipment.…
N Channel Power MOSFETs or V-MOSFET or V-FET: N Channel Power MOSFETs - Power MOSFETs are usually constructed in V-configuration, as shown in Fig. 13.94. That is why, the device is…
Small Signal Model of MOSFET: If the small bulk resistances of the source and drain are neglected, the Small Signal Model of MOSFET and its equivalent circuit between terminals G…
Applications of FETs (Field Effect Transistors): Applications of FETs - FET has a very high input impedance (100 MΩ in case of JFETs and 104 to 109 MΩ in case of…
Generalized FET Amplifier Circuit: The analysis of a common source amplifier with a source resistance RS, a common gate amplifier and a common drain amplifier at low frequencies may be…
Small Signal Model of FET: The Small Signal Model of FET which consists of Low Frequency Small Signal Model for FET and High Frequency Model for FET. Low Frequency Model:…
FET Biasing Methods - Fixed Bias, Self Bias, Potential Divider Bias and Current Source Bias: Unlike BJTs, thermal runaway does not occur with FETs. However, the wide differences in maximum…
Parameters of JFET: JFET has certain parameters which determine the performance. Such Parameters of JFET are (i) ac drain resistance, (ii) transconductance, (iii) amplification factor, and (iv) dc drain resistance,…