Semiconductor Lasers

Semiconductor Lasers: Semiconductor Lasers was discovered in 1962 that a gallium arsenide diode, such as the one shown in Figure 12-41, is capable of producing laser action. This occurs when the diode is forward-biased, so that effective dc pumping is needed (a very convenient state, of affairs). Depending on its precise chemical composition, the GaAs […]

Pulsed Ruby Laser

Pulsed Ruby Laser: The Pulsed Ruby Laser is similar to the ruby cavity maser, to some extent, in that stimulation is applied to raise the chromium atoms to a higher energy level to secure a population inversion once again. However, this time pumping is With light, rather than with microwave, energy. Also, no magnetic field […]

Ruby Maser

Ruby Maser: As was know ferrites of certain materials have atomic systems that can be made to resonate magnetically at frequencies dependent on the atomic structure of the material and the strength of the applied magnetic field. When such a resonance is stimulated by the application of a signal at that frequency, absorption will take […]

Schottky Barrier Diode

Schottky Barrier Diode: Schottky junctions have been shown and described throughout this chapter, in conjunction with various devices that use them in their construction in Figure 12-4. Accordingly it will be realized that the Schottky Barrier Diode is an extension of the oldest semiconductor device of them all the point-contact diode. Here the metal-semiconductor interface […]

Pin Diode Construction

Pin Diode Construction: The Pin Diode Construction consists of a narrow layer of p-type semiconductor separated from an equally narrow layer of n-type material by a somewhat thicker region of intrinsic material. The intrinsic layer is a lightly doped n-type semiconductor. The name of the diode is derived from the construction (p-intrinsic-n). Although gallium arsenide […]