Semiconductor Diode Specifications: Diode Data Sheets – To select a suitable diode for a particular application, the data sheets, or Semiconductor Diode Specifications, provided by device manufacturers must be consulted. Portions of typical diode data sheets are shown in Fig. 2-21 . Most data sheets start off with the device type number at the top […]
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AC Equivalent Circuit of Semiconductor Diode: Junction Capacitances – The depletion region of a pn-junction is a layer depleted of charge carriers situated between two blocks of low resistance material. Because this is the description of a capacitor, the depletion region clearly has a capacitance. The depletion layer capacitance (Cpn) may be calculated from the equation
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Temperature Effect on Semiconductor Diode: Diode Power Dissipation – The power dissipation in a diode is simply calculated as the device terminal voltage multiplied by the current level. Device manufacturers specify a maximum power dissipation for each type of diode. If the specified level is exceeded, the device will overheat and it may short-circuit or
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DC Load Line Analysis of Semiconductor Diode: Figure 2-13(a) shows a DC Load Line Analysis of Semiconductor Diode in series with a 100 Ω resistance (R1) and a supply voltage (E). The polarity of E is such that the diode is forward biased, so a diode forward current (IF) flows. As already discussed, the circuit current
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Diode Approximations: Diode Approximations – As we know already that, a diode is essentially a one-way device, offering a low resistance when forward biased, and a high resistance when biased in reverse. An ideal diode (or perfect diode) would have zero forward resistance and zero forward voltage drop. It would also have an infinitely high
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Forward and Reverse Bias Characteristics of Diode: Figures 2-4 and 2-5 show typical Forward and Reverse Bias Characteristics of Diode for low-current silicon and germanium diodes. From the silicon diode characteristics in Fig. 2-4, it is seen that the forward current (IF) remains very low (less than microamps) until the diode forward-bias voltage (VF) exceeds
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PN Junction Diode Working Principle: A PN Junction Diode Working Principle explains about the ability to permit substantial current flow when forward-biased, and to block current when reverse-biased. Thus, it can be used as a switch; on when forward-biased, and off when biased in reverse. In PN Junction Diode Working Principle, the copper wire connecting
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PN Junction Forward Bias: Consider the effect of an external bias voltage applied with the polarity of PN Junction Forward Bias shown in Fig. 1-23; positive on the p-side, negative on the n-side. The holes on the p-side, being positively charged particles, are repelled from the positive terminal and driven toward the junction. Similarly, the
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Reverse Bias PN Junction: When an external bias voltage is applied to a pn-junction, positive to the n-side and negative to the pride, electrons from the n-side are attracted to the positive terminal, and holes from the p-side are attracted to the negative terminal. As shown in Fig. 1-21, holes on the p-side of the
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PN Junction Semiconductor: Two blocks of PN Junction Semiconductor material are represented in Fig. 1-17; one block is p-type material, and the other is n-type. The small circles in the p-type material represent holes, which are the majority charge carriers in p-type. The dots in the n-type material represent the majority charge carrier free electrons
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