Switching Characteristics of Power MOSFET: Power MOSFET is an enhancement mode device modified to handle much large currents and voltages than a conventional MOSFET. Prior to the invention of the…
Large Signal Tuned Amplifier - Operation and its Equivalent Circuit: Tuned amplifier circuits are for class A operation and their use is limited to applications in which RF signal has…
N Channel Power MOSFETs or V-MOSFET or V-FET: N Channel Power MOSFETs - Power MOSFETs are usually constructed in V-configuration, as shown in Fig. 13.94. That is why, the device is…
FET Biasing Methods - Fixed Bias, Self Bias, Potential Divider Bias and Current Source Bias: Unlike BJTs, thermal runaway does not occur with FETs. However, the wide differences in maximum…
Fixed Bias Circuit Diagram - Advantages and Disadvantages: Fixed Bias Circuit Diagram shown in Fig. 12.5 uses two batteries VBB and VCC. The battery VBB gives potential to the base…
Bias Stability Factor of Transistor: Bias Stability Factor of Transistor - Only the fixing of a suitable operating point is not sufficient but it is also to be ensured that…
Complementary MOSFET Common Source Power Amplifier: Advantages of MOSFETs: Complementary MOSFET Common Source Power Amplifier have several advantages over power BJTs for large signal amplifier applications. One of the most…
Trapatt Diode Construction and Working: The Trapatt Diode Construction and Working is derived from and closely related to the IMPATT diode. Indeed, as pointed out near the beginning of this…