Complementary MOSFET Common Source Power Amplifier

Complementary MOSFET Common Source Power Amplifier: Advantages of MOSFETs: Complementary MOSFET Common Source Power Amplifier have several advantages over power BJTs for large signal amplifier applications. One of the most important differences is that MOSFET transfer characteristics (ID/VGS) are more linear than IC/VBE characteristics for BJTs. This helps to minimize distortion in the output waveform. […]

Quasi Complementary Output Stage

Quasi Complementary Output Stage: The Quasi Complementary Output Stage was originally developed because complementary high-power transistors were not readily available. Despite the fact that such transistors are now available, the Quasi Complementary Output Stage circuit is still widely used. Consider the arrangement in Fig. 18-26. Q3 is a high-power npn transistor, and Q5 is a […]

Complementary Emitter Follower Circuit

Complementary Emitter Follower Circuit: Two BJTs connected to function as Complementary Emitter Follower Circuit are shown in Fig. 18-17. Although one is npn and the other is prim the devices are selected to have similar parameters, so they are complementary transistors. The circuit is termed a complementary emitter follower. A single-transistor emitter follower is essentially […]