Determination of Diode Characteristics: Determination of Diode Characteristics – The forward characteristics of a diode can be obtained by use of the circuit depicted in Fig. 7.16 (a). The diode voltage is set at a series of convenient levels, and the corresponding current levels are measured and recorded. The characteristics are then plotted from the […]
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Terminal Characteristics of Junction Diodes: The volt-ampere characteristic of a silicon junction diode is depicted in Fig. 7.14. The same Terminal Characteristics of Junction Diodes is depicted in Fig. 7.15 with some scales expanded and others compressed to reveal details—the changes in scale have resulted in the apparent discontinuity at the origin. As shown in
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Quantitative Theory of PN Junction Diode: Quantitative Theory of PN Junction Diode – Here an expression for the total current will be derived as a function of the applied voltage with the assumption that depletion layer thickness is negligible (i.e., barrier width is zero). When a P-N diode is forward biased, holes are injected from
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Current Components in PN Junction Diode: A Current Components in PN Junction Diode with a forward bias with an external voltage V is shown in Fig. 7.12 (a). Due to forward bias, there exists a potential gradient in P and N materials. Now the holes from P-region and electrons from N-region are injected into the
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What is an Ideal Diode – Working and its V-I Characteristics: Diode is a two terminal device that permits only unidirectional conduction. It conducts well in the forward direction and poorly in the reverse direction. It would have been ideal if it acted as a perfect conductor (with zero resistance or zero voltage drop across
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Breakdown Voltage of PN Junction Diode: When an ordinary P-N junction diode is reverse biased, normally only very small reverse saturation current flows. This current is due to movement of minority carriers. It is almost independent of the voltage applied. However, if the reverse bias is increased, a point is reached when the junction breaks
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Diode Failure Modes and Causes: We would certainly like for solid-state components to be 100% reliable but this is unfortunately not true. All solid-state devices have a certain probability of failure. To be good circuit designers and/or good circuit troubleshooters, we should have some idea of the most likely failure modes for solid-state devices. This
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Explain Steady State Conditions in Semiconductor: Explain Steady State Conditions in Semiconductor – When the P-N junction is forward biased, current flows quite freely P to N in a P-N junction, as discussed in Fig. 6.28. But when the P-N junction is reverse biased, there is virtually no flow of current. This asymmetry of the
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Metal Semiconductor Junctions: Metal semiconductor junctions are very common in all semiconductor devices and are very important. Depending upon the doping concentration, materials, and the characteristics of the interface, the metal semiconductor junctions can act as either an ohmic contact or as a Schottky barrier. Structure of Metal Semiconductor Junctions: A metal-semiconductor junction, as its
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Zero bias PN junction: Zero bias PN junction – Here we will examine the properties of the step junction in thermal equilibrium, where no currents exist and no external excitation is applied. We will determine built-in potential barrier through the depletion or space-charge region, electric field and width of the space-charge region. Built-in Potential Barrier:
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